FPD750SOT343 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

FPD750SOT343
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• PERFORMANCE (1850 MHz)
♦ 0.3 dB Noise Figure at 25% Bias
♦ 20 dBm Output Power (P_1dB)
♦ 18 dB Small-Signal Gain (SSG)
♦ 38 dBm Output IP3 at 50% Bias
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD750SOT343E
• DESCRIPTION AND APPLICATIONS
The FPD750SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 μm x 750 μm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD750 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Minimum Noise Figure
NF
V_DS = 3.3 V; I_DS = 50% I_DSS
0.6
V_DS = 3.3 V; I_DS = 25% I_DSS
0.3
Output Third-Order Intercept Point IP3
(from 15 to 5 dB below P_1dB)
V_DS = 3.3 V; I_DS = 50% I_DSS
V_DS = 3.3 V; I_DS = 25% I_DSS
Tuned for Optimum IP3
35.5 38
34
Small-Signal Gain
SSG
Power at 1dB Gain Compression
P_1dB
V_DS = 3.3 V; I_DS = 50% I_DSS
V_DS = 3.3 V; I_DS = 25% I_DSS
V_DS = 3.3 V; I_DS = 50% I_DSS
V_DS = 3.3 V; I_DS = 25% I_DSS
16.5 18
17
19
20
18
Max
0.9
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 0.75 mA
I_GS = 0.75 mA
I_GD = 0.75 mA
185 230 280
375
200
5
0.7 1.0 1.3
12
16
12
18
Units
dB
dBm
dB
dBm
mA
mA
mS
μA
V
V
V
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 04/28/05
Email: [e-mail]