FPD750DFN_1 Datasheet, PDF (1/9 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v3.0
FEATURES (1850MHZ):
• 24 dBm Output Power (P1dB)
• 20 dB Small-Signal Gain (SSG)
• 0.3 dB Noise Figure
• 39 dBm Output IP3 at 50% Bias
• 45% Power-Added Efficiency
• RoHS compliant
PACKAGE:
RoHS
9
GENERAL DESCRIPTION:
The FPD750DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
22.5
19
TYP
24
20
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75mA
IGD = 0.75 mA
45
%
0.7
1.1
dB
0.3
0.9
37
dBm
39
180
230
280
mA
375
mA
200
mS
1
15
µA
0.7
1.0
1.3
V
12
16
V
12
16
V
Note: T_AMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com