FPD750 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 0.5W POWER PHEMT

FPD750
0.5W POWER PHEMT
• FEATURES
♦ 27 dBm Linear Output Power at 12 GHz
♦ 11.5 dB Power Gain at 12 GHz
♦ 14.5 dB Maximum Stable Gain at 12 GHz
♦ 38 dBm Output IP3
♦ 50% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (2X)
• DESCRIPTION AND APPLICATIONS
DIE SIZE (µm): 340 x 470
DIE THICKNESS: 75 µm
BONDING PADS (µm): >60 x 60
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD750 also features Si₃N₄ passivation and is available in a P100 flanged ceramic
package and in the low cost plastic SOT89 and SOT343 plastic packages.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 8 V; I_DS = 50% I_DSS
26.5 27.0
Maximum Stable Gain (S₂₁/S₁₂)
SSG
V_DS = 8 V; I_DS = 50% I_DSS
13.5 14.5
Power Gain at P_1dB
G_1dB
V_DS = 8 V; I_DS = 50% I_DSS
10.5 11.5
Power-Added Efficiency
PAE
V_DS = 8 V; I_DS = 50% I_DSS;
45
P_OUT = P_1dB
Output Third-Order Intercept Point IP3
V_DS = 10V; I_DS = 50% I_DSS
(from 15 to 5 dB below P_1dB)
Matched for optimal power
38
Tuned for best IP3
40
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
θ_JC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 0.75 mA
I_GS = 0.75 mA
I_GD = 0.75 mA
V_DS > 6V
185 230
370
200
10
1.0
12.0 14.0
14.5 16.0
65
Max Units
dBm
dB
dB
%
dBm
280 mA
mA
mS
µA
V
V
V
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 11/17/04
Email: [e-mail]