FPD6836_1 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 0.25W POWER PHEMT

0.25W POWER PHEMT
FPD6836
Datasheet v3.0
FEATURES:
• 25.5 dBm Output Power (P1dB)
• 10 dB Power Gain at 12 GHz
• 16.5 dB Max Stable Gain at 12 GHz
• 12 dB Maximum Stable Gain at 24 GHz
• 50% Power-Added Efficiency
• 8V Operation
GENERAL DESCRIPTION:
The FPD6836 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
360 µm Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
ELECTRICAL SPECIFICATIONS¹:
LAYOUT:
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
PARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
SYMBOL
P1dB
G1dB
CONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
MIN TYP MAX
24.5 25.5
9.0
10.0
UNITS
dBm
dB
Power-Added Efficiency
PAE
VDS = 8 V; IDS = 50% IDSS
POUT = P1dB
50
%
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 24 GHz
Saturated Drain-Source Current
MSG
IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 1.3 V; VGS = 0 V
15.5 16.5
dB
11.0 12.0
90
110
135
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
215
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
140
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.36 mA
0.7
1.0
1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.36 mA
12.0 14.0
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.36 mA
14.5 16.0
Thermal Resistivity (see Notes)
θJC
VDS > 3V
125
Note:¹ T_Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal
mS
µA
V
V
V
°C/W
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com