FPD6836SOT343 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

PRELIMINARY
FPD6836SOT343
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• PERFORMANCE (1850 MHz)
♦ 0.5 dB Noise Figure
♦ 20 dBm Output Power (P_1dB)
♦ 20 dB Small-Signal Gain (SSG)
♦ 32 dBm Output IP3
♦ Evaluation Boards Available
• DESCRIPTION AND APPLICATIONS
The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD6836 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Minimum Noise Figure
NF
V_DS = 3.0 V; I_DS = 50% I_DSS
0.5
V_DS = 3.0 V; I_DS = 25% I_DSS
0.4
Output Third-Order Intercept Point IP3
(from 15 to 5 dB below P_1dB)
V_DS = 3.0 V; I_DS = 50% I_DSS
V_DS = 3.0 V; I_DS = 25% I_DSS
Tuned for Optimum IP3
32
30
Small-Signal Gain
SSG
Power at 1dB Gain Compression
P_1dB
V_DS = 3.0 V; I_DS = 50% I_DSS
V_DS = 3.0 V; I_DS = 25% I_DSS
V_DS = 3.0 V; I_DS = 50% I_DSS
V_DS = 3.0 V; I_DS = 25% I_DSS
18 20
18
18 20
18
Max
0.9
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 0.75 mA
I_GS = 0.75 mA
I_GD = 0.75 mA
90
135
200
100
1
10
0.7 1.0 1.3
12 18
12 18
Units
dB
dBm
dB
dBm
mA
mA
mS
µA
V
V
V
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 09/15/05
Email: [e-mail]