FPD6836P70_1 Datasheet, PDF (1/9 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

FPD6836P70
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
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FEATURES:
PACKAGE:
• 22 dBm Output Power (P1dB)
• 15 dB Power Gain (G1dB) at 5.8 GHz
• 0.8 dB Noise Figure at 5.8 GHz
• 32 dBm Output IP3 at 5.8 GHz
• 45% Power-Added Efficiency at 5.8 GHz
• Useable Gain to 18 GHz
Datasheet v3.0
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface
mountable packaged depletion mode
pseudomorphic High Electron Mobility
Transistor (pHEMT) optimised for low noise,
high frequency applications.
TYPICAL APPLICATIONS:
• Gain blocks and medium power stages
• WiMax (2-11GHz)
• WLAN 802.11a (5.8GHz)
• Point-to-Point Radio (to 18GHz)
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small Signal Gain
SSG
Power-Added Efficiency
PAE
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 18 GHz
Noise Figure
Output Third-Order Intercept Point
MSG
NF
IP3
CONDITIONS
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
POUT = P1dB
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA,
VDS = 5V; IDS = 55mA
POUT = 10 dBm SCL
MIN
14
TYP
22
16
45
MAX UNITS
dBm
dB
%
15
12
0.8
dB
32
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
90
105
135
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
215
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
140
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.2 mA
0.7
1.0
1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.36mA
12
14
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.36 mA
14.5
16
Thermal Resistance
RθJC
275
Note: T_AMBIENT = 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)
mA
mA
mS
µA
V
V
V
°C/W
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com