FPD6836P70 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – HI-FREQUENCY PACKAGED PHEMT

PRELIMINARY
FPD6836P70
HI-FREQUENCY PACKAGED PHEMT
• PERFORMANCE
♦ 22 dBm Output Power (P_1dB)
♦ 19 dB Power Gain (G_1dB) at 1.85 GHz
♦ 0.5 dB Noise Figure at 1.85 GHz
♦ 32 dBm Output IP3
♦ 50% Power-Added Efficiency at 1.85 GHz
♦ Useable Gain to 20 GHz
♦ Evaluation Boards Available
GATE LEAD IS ANGLED
• DESCRIPTION AND APPLICATIONS
The FPD6836P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. . The FPD6836 is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 22 GHz.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL (except as noted)
Power at 1dB Gain Compression
P_1dB
V_DS = 5 V; I_DS = 50% I_DSS
22
Gain at 1dB Gain Compression
SSG
V_DS = 5 V; I_DS = 50% I_DSS
19
Power-Added Efficiency
PAE
V_DS = 5 V; I_DS = 50% I_DSS;
45
P_OUT = P_1dB
Maximum Stable Gain (S₂₁/S₁₂)
MSG
V_DS = 5 V; I_DS = 50% I_DSS
f = 12 GHz
13
f = 18 GHz
11
Noise Figure
NF
V_DS = 5 V; I_DS = 25% I_DSS
0.5
Output Third-Order Intercept Point IP3
V_DS = 5V; I_DS = 50% I_DSS
32
P_OUT = 11 dBm SCL
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
θ_JC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 0.2 mA
I_GS = 0.2 mA
I_GD = 0.2 mA
V_DS > 3V
85 105 125 mA
215
mA
140
mS
1
10 µA
0.7 0.9 1.3 V
12 14
V
14.5 16
V
275
°C/W
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Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 7/15/05
Email: [e-mail]