FPD6836 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 0.25W POWER PHEMT

FPD6836
0.25W POWER PHEMT
• FEATURES
♦ 25.5 dBm Linear Output Power at 12 GHz
♦ 10 dB Power Gain at 12 GHz
♦ 16.5 dB Maximum Stable Gain at 12 GHz
♦ 12 dB Maximum Stable Gain at 24 GHz
♦ 50% Power-Added Efficiency
♦ 8V Operation
GATE
BOND
PAD (1X)
DRAIN
BOND
PAD (1X)
SOURCE
BOND
PAD (2x)
• DESCRIPTION AND APPLICATIONS
DIE SIZE (µm): 400 x 400 µm
DIE THICKNESS: 75 µm
BONDING PADS (µm): >75 x 70
The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable medium-
power applications. The FPD6836 also features Si₃N₄ passivation and is available in a low cost
plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 8 V; I_DS = 50% I_DSS
24.5 25.5
Power Gain at P_1dB
G_1dB
V_DS = 8 V; I_DS = 50% I_DSS
9.0 10.0
Power-Added Efficiency
PAE
V_DS = 8 V; I_DS = 50% I_DSS
50
P_OUT = P_1dB
Maximum Stable Gain (S₂₁/S₁₂)
SSG
f = 12 GHz
f = 24 GHz
V_DS = 8 V; I_DS = 50% I_DSS
15.5 16.5
11.0 12.0
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
θ_JC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 0.36 mA
I_GS = 0.36 mA
I_GD = 0.36 mA
V_DS > 3V
90 110
215
140
1
0.7 1.0
12.0 14.0
14.5 16.0
125
Max Units
dBm
dB
%
dB
135 mA
mA
mS
10 µA
1.3 V
V
V
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 11/17/04
Email: [e-mail]