FPD4000AS Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 2.5W PACKAGED POWER PHEMT

FPD4000AS
2.5W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 34.5 dBm Output Power (P_1dB)
♦ 12 dB Power Gain (G_1dB)
♦ 45 dBm Output IP3
♦ 8V Operation
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Design Data Available on Website
♦ Suitable for applications to 5 GHz
• DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR
MARKING CODE
The FPD4000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 8V; I_DQ = 700 mA
33.5 34.5
Γ_S and Γ_L tuned for Optimum IP3
Power Gain at dB Gain Compression G_1dB
V_DS = 8V; I_DQ = 700 mA
10.5 12
Γ_S and Γ_L tuned for Optimum IP3
Maximum Stable Gain
MSG
V_DS = 8V; I_DQ = 700 mA
18
S₂₁/S₁₂
P_IN = 0dBm, 50Ω system
Power-Added Efficiency
PAE
V_DS = 8V; I_DQ = 700 mA
50
at 1dB Gain Compression
Γ_S and Γ_L tuned for Optimum IP3
3^rd-Order Intermodulation Distortion IM3
V_DS = 8V; I_DQ = 700 mA
Γ_S and Γ_L tuned for Optimum IP3
P_OUT = 23 dBm (single-tone level)
-46
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
Θ_CC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -3 V
V_DS = 1.3 V; I_DS = 8 mA
I_GS = 8 mA
I_GD = 8 mA
See Note on following page
1.9 2.3
3.6
2.4
70
0.7 0.9
6
10
20 22
16
Max Units
dBm
dB
%
dBc
2.65 mA
mA
mS
170 µA
1.4 V
V
V
°C/W
Phone: [phone]
Fax: [phone]
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: [e-mail]