|
FPD4000AF Datasheet, PDF (1/9 Pages) Filtronic Compound Semiconductors – 4W PACKAGED POWER PHEMT | |||
|
PRELIMINARY
FPD4000AF
4W PACKAGED POWER PHEMT
⢠PERFORMANCE (1.8 GHz)
⦠36.5 dBm Output Power (P1dB)
⦠10.5 dB Power Gain (G1dB)
⦠49 dBm Output IP3
⦠10V Operation
⦠45% Power-Added Efficiency
⦠Evaluation Boards Available
⦠Additional Design Data Available on Website
⦠Usable Gain to 4GHz
SEE PACKAGE
OUTLINE FOR
MARKING CODE
⢠DESCRIPTION AND APPLICATIONS
The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
⢠ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 10V; IDQ = 720 mA
35.5 36.5
ÎS and ÎL tuned for Optimum IP3
Power Gain at dB Gain Compression G1dB
VDS = 10V; IDQ = 720 mA
ÎS and ÎL tuned for Optimum IP3
9.5 10.5
Maximum Stable Gain
MSG
VDS = 10 V; IDQ = 720 mA
19
S21/S12
PIN = 0dBm, 50⦠system
Power-Added Efficiency
PAE
VDS = 10V; IDQ = 720 mA
45
at 1dB Gain Compression
ÎS and ÎL tuned for Optimum IP3
3rd-Order Intermodulation Distortion IP3
VDS = 10V; IDQ = 720 mA
ÎS and ÎL tuned for Optimum IP3
-47
POUT = 25.5 dBm (single-tone level)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ÎCC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS â
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 8 mA
IGS = 8 mA
IGD = 8 mA
See Note on following page
1.9 2.3
3.6
2.4
70
0.7 0.9
6
8
20 22
12
Max
-44
2.65
170
1.4
Units
dBm
dB
%
dBc
A
A
S
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 08/09/04
Email: sales@filcsi.com
|
▷ |