FPD3000_1 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 2W POWER PHEMT

2W POWER PHEMT
FEATURES:
• 32.5 dBm Linear O/p Power at 12 GHz
• 6.5 dB Power Gain at 12 GHz
• 8 dB Maximum Stable Gain at 12 GHz
• 42 dBm Output IP3
• 30% Power-Added Efficiency
GENERAL DESCRIPTION:
The FPD3000 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
3000 µm Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD3000 is also available in the low cost
plastic SOT89 package.
LAYOUT:
FPD3000
Datasheet v3.0
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS¹:
PARAMETER
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P1dB
Power-Added Efficiency
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
SYMBOL
P1dB
SSG
G1dB
PAE
IP3
Saturated Drain-Source Current
IDSS
CONDITIONS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power
Tuned for best IP3
VDS = 1.3 V; VGS = 0 V
MIN TYP MAX
31.5 32.5
7.0
8.0
UNITS
dBm
dB
6.0
6.5
dB
30
%
42
44
750
930
1100
dBm
dBm
mA
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 3 mA
IGS = 3 mA
IGD = 3 mA
VDS > 6V
1.5
800
10
1.0
12.0 14.0
14.5 16.0
20
A
mS
µA
V
V
V
°C/W
Note:¹ T_Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal
1
Tel: [phone]
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com