FPD3000P100 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 2W PACKAGED POWER PHEMT

• FEATURES
♦ 32.5 dBm Linear Output Power
♦ 17 dB Power Gain at 2 GHz
♦ 9.5 dB Maximum Stable Gain at 10 GHz
♦ 42 dBm Output IP3
♦ 45% Power-Added Efficiency at 2 GHz
FPD3000P100
2W PACKAGED POWER PHEMT
• DESCRIPTION AND APPLICATIONS
The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have been optimized for
reliable high-power applications. The FPD3000P100 also features Si₃N₄ passivation and is also
available in die form and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 8 V; I_DS = 50% I_DSS
31.0 32.5
dBm
Power Gain at P_1dB
G_1dB
V_DS = 8 V; I_DS = 50% I_DSS
16.5 17.0
dB
Maximum Stable Gain (S₂₁/S₁₂)
SSG
V_DS = 8 V; I_DS = 50% I_DSS
f = 2 GHz
20.5 21.5
dB
f = 10 GHz
8.5 9.5
dB
Power-Added Efficiency
PAE
V_DS = 8 V; I_DS = 50% I_DSS;
P_OUT = P_1dB
45
%
Output Third-Order Intercept Point IP3
(from 15 to 5 dB below P_1dB)
V_DS = 8V; I_DS = 50% I_DSS
Matched for optimal power
42
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGD|
θ_JC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 3 mA
I_GD = 3 mA
V_DS > 6V
750 930 1110 mA
1.5
A
800
mS
2
20 µA
0.7 1.0 1.3 V
14.5 16.0
V
24
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Released: 6/27/05
Email: [e-mail]