FPD2250SOT89 Datasheet, PDF (1/8 Pages) Filtronic Compound Semiconductors – LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

FPD2250SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• PERFORMANCE (1850 MHz)
♦ 29 dBm Output Power (P_1dB)
♦ 14 dB Small-Signal Gain (SSG)
♦ 1.0 dB Noise Figure
♦ 44 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD2250SOT89E
• DESCRIPTION AND APPLICATIONS
The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD2250 is available in die form and in other
packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
Small-Signal Gain
SSG
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS
28 29
12 14
Power-Added Efficiency
PAE
V_DS = 5 V; I_DS = 50% I_DSS;
50
P_OUT = P_1dB
Noise Figure
NF
V_DS = 5 V; I_DS = 50% I_DSS
1.0
V_DS = 5 V; I_DS = 25% I_DSS
0.8
Output Third-Order Intercept Point IP3
V_DS = 5V; I_DS = 50% I_DSS
(from 15 to 5 dB below P_1dB)
Matched for optimal power
43
Matched for best IP3
44
Max
1.2
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
V_DS = 2 V; V_GS = 0 V
V_DS = 2 V; V_GS ≅ +1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 2.25 mA
I_GS = 2.25 mA
I_GD = 2.25 mA
560 700 825 mA
1.1
A
600
mS
1
10 µA
0.7 1.0 1.3 V
12 16
V
12 18
V
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Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 01/05/05
Email: [e-mail]