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FPD2250 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 1.5W POWER PHEMT
FPD2250
1.5W POWER PHEMT
• FEATURES
♦ 32 dBm Linear Output Power at 12 GHz
♦ 7.5 dB Power Gain at 12 GHz
♦ 42 dBm Output IP3
♦ 45% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (2X)
• DESCRIPTION AND APPLICATIONS
DIE SIZE (µm):: 680 x 470
DIE THICKNESS: 75 µm
BONDING PADS (µm): > 85 x 60
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25 µm by 2250 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD2250 also features Si3N4 passivation and is available in a P100 flanged
ceramic package and in the low cost plastic SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Maximum Stable Gain (S21/S12)
P1dB
MSG
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
31.0 32.0
8.0 9.0
Power Gain at P1dB
Power-Added Efficiency
G1dB
PAE
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS;
POUT = P1dB
6.5 7.5
45
Output Third-Order Intercept Point IP3
VDS = 8 V; IDS = 50% IDSS
(from 15 to 5 dB below P1dB)
Matched for optimal power
40
Tuned for best IP3
42
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 2.25 mA
IGS = 2.25 mA
IGD = 2.25 mA
VDS > 6V
560 700
1125
600
10
1.0
12.0 14.0
14.5 16.0
30
Max
825
Units
dBm
dB
dB
%
dBm
mA
mA
mS
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/17/04
Email: sales@filcsi.com