FPD200P70_1 Datasheet, PDF (1/9 Pages) Filtronic Compound Semiconductors – HIGH FREQUENCY PACKAGED PHEMT

HIGH FREQUENCY PACKAGED PHEMT
FEATURES:
• 20 dBm Output Power (P_1dB)
• 17 dB Gain at 5.8 GHz
• 0.7 dB Noise Figure at 5.8 GHz
• 30 dBm Output IP3
• 45% Power-Added Efficiency
• Useable Gain to 26 GHz
PACKAGE
FPD200P70
Data sheet v3.0
RoHS
9
GENERAL DESCRIPTION:
The FPD200P70 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 mm x 200 mm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography.
TYPICAL APPLICATIONS:
• LNAs and Driver Amplifiers to 26GHz
• VCOs and Frequency Doublers
TYPICAL PERFORMANCE:
RF PARAMETER
SYMBOL
CONDITIONS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 30mA
Small Signal Gain
SSG
VDS = 5 V; IDS = 30mA
Power-Added Efficiency
PAE
Maximum Stable Gain (|S21/S12|)
Minimum Noise Figure
Output Third-Order Intercept Point
POUT = 9 dBm per Tone
MSG
NFmin
IP3
VDS = 5 V; IDS = 30mA
POUT = P1dB
VDS = 5 V; IDS = 30mA
VDS = 5 V; IDS = 30mA
VDS = 5V; IDS = 30mA
VDS = 8V; IDS = 30mA
1.85GHZ
20
21
5.8GHZ
19
17
18GHZ UNITS
20
dBm
9
dB
45
45
45
%
24
21
14
0.3
0.7
2.2
dB
29
28
28.5
dBm
31
30
31
ELECTRICAL SPECIFICATIONS:
DC PARAMETER
SYMBOL
CONDITIONS
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.2 mA
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.2 mA
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.2 mA
Thermal Resistivity (see Notes)
θJC
VDS > 3V
Note: T_AMBIENT = 22°
MIN
45
0.7
12
14.5
TYP
60
120
80
1
0.9
14
16
325
MAX
75
10
1.3
UNITS
mA
mA
mS
µA
V
V
V
°C/W
Tel: [phone]
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com