FPD2000V Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 2W POWER PHEMT

PRELIMINARY
FPD2000V
2W POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 33 dBm Linear Output Power
♦ 14.5 dB Power Gain
♦ Useable Gain to 10 GHz
♦ 44 dBm Output IP3
♦ 20 dB Maximum Stable Gain
♦ 45% Power-Added Efficiency
♦ 10V Operation / Plated Source Thru-Vias
• DESCRIPTION AND APPLICATIONS
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
DIE SIZE (µm): 650 x 800
DIE THICKNESS: 75µm
BONDING PADS (µm): >70 x 70
The FPD2000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S₂₁/S₁₂
P_1dB
G_1dB
MSG
V_DS = 10V; I_DS = 350 mA
32 33
Γ_S and Γ_L tuned for Optimum IP3
V_DS = 10V; I_DS = 350 mA
13.0 14.5
Γ_S and Γ_L tuned for Optimum IP3
V_DS = 10 V; I_DS = 350mA
20
P_IN = 0dBm, 50Ω system
Power-Added Efficiency
PAE
V_DS = 10V; I_DS = 350 mA
45
at 1dB Gain Compression
Γ_S and Γ_L tuned for Optimum IP3
3^rd-Order Intermodulation Distortion IM3
V_DS = 10V; I_DS = 350 mA
Γ_S and Γ_L tuned for Optimum IP3
P_OUT = 22 dBm (single-tone level)
-46
Max
Units
dBm
dB
%
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
Θ_CC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -3 V
V_DS = 1.3 V; I_DS = 4 mA
I_GS = 4 mA
I_GD = 4 mA
See Note on following page
975 1150 1375 mA
1800
mA
1200
mS
35 85 µA
0.7 0.9 1.4 V
6
8
V
20 22
V
18
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Email: [e-mail]