FPD2000AS Datasheet, PDF (1/7 Pages) Filtronic Compound Semiconductors – 2W PACKAGED POWER PHEMT

PRELIMINARY
FPD2000AS
2W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 33 dBm Output Power (P_1dB)
♦ 14 dB Power Gain (G_1dB)
♦ 46 dBm Output IP3
♦ 10V Operation
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Design Data Available on Website
♦ Usable Gain to 4GHz
• DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR
MARKING CODE
The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 10V; I_DS = 350 mA
32 33
Γ_S and Γ_L tuned for Optimum IP3
Power Gain at dB Gain Compression G_1dB
V_DS = 10V; I_DS = 350 mA
12.5 14.0
Γ_S and Γ_L tuned for Optimum IP3
Maximum Stable Gain
MSG
V_DS = 10 V; I_DS = 350 mA
20
S₂₁/S₁₂
P_IN = 0dBm, 50Ω system
Power-Added Efficiency
PAE
V_DS = 10V; I_DS = 350 mA
45
at 1dB Gain Compression
Γ_S and Γ_L tuned for Optimum IP3
3^rd-Order Intermodulation Distortion IP3
V_DS = 10V; I_DS = 350 mA
Γ_S and Γ_L tuned for Optimum IP3
-47
P_OUT = 22 dBm (single-tone level)
Max Units
dBm
dB
%
-44 dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
Θ_CC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -3 V
V_DS = 1.3 V; I_DS = 4 mA
I_GS = 4 mA
I_GD = 4 mA
See Note on following page
975 1150 1325 mA
1800
mA
1200
mS
35 85 µA
0.7 0.9 1.4 V
14 16
V
20 22
V
20
°C/W
Phone: [phone]
Fax: [phone]
http:// www.filcs.com
Revised: 05/03/04
Email: [e-mail]