FPD1500SOT89_1 Datasheet, PDF (1/12 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD1500SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v3.0
FEATURES (1850MHZ):
• 27.5 dBm Output Power (P1dB)
• 17 dB Small-Signal Gain (SSG)
• 1.2 dB Noise Figure
• 42 dBm Output IP3
• 50% Power-Added Efficiency
• FPD1500SOT89E - RoHS compliant
PACKAGE:
RoHS
9
GENERAL DESCRIPTION:
The FPD1500SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 1500 µm Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed gate
structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
26.0
15.5
TYP
27.5
17
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
RθJC
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
50
%
1.0
1.2
dB
38
40
42
dBm
375
465
550
mA
750
mA
400
mS
1
15
µA
0.7
1.0
1.3
V
12
16
V
12
16
V
60
°C/W
Note: T_AMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Tel: [phone]
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com