FPD1500SOT89 Datasheet, PDF (1/11 Pages) Filtronic Compound Semiconductors – LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
• PERFORMANCE (1850 MHz)
♦ 27.5 dBm Output Power (P_1dB)
♦ 17 dB Small-Signal Gain (SSG)
♦ 1.2 dB Noise Figure
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD1500SOT89E
• DESCRIPTION AND APPLICATIONS
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 5.0V; I_DS = 50% I_DSS
26.0 27.5
Small-Signal Gain
Power-Added Efficiency
P_OUT = P_1dB
SSG
PAE
V_DS = 5.0V; I_DS = 50% I_DSS
V_DS = 5.0V; I_DS = 50% I_DSS
15.5 17
50
Noise Figure
NF
V_DS = 5.0V; I_DS = 50% I_DSS
1.2
V_DS = 5.0V; I_DS = 50% I_DSS
38 40
Output Third-Order Intercept Point IP3
Matched for best P_1dB
(from 15 to 5 dB below P_1dB)
Matched for best IP3 at 50% I_DSS
42
Max
1.5
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 1.5 mA
I_GS = 1.5 mA
I_GD = 1.5 mA
375 465 550 mA
750
mA
400
mS
1
15 μA
0.7 1.0 1.3 V
12 16
V
12 16
V
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http://www.filtronic.co.uk/semis
Revised11/11/05
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