FPD1050SOT89_1 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD1050SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v3.0
FEATURES (1.8GHZ):
• 26 dBm Output Power (P1dB)
• 17.5 dB Small-Signal Gain (SSG)
• 1.1 dB Noise Figure
• 40 dBm Output IP3
• 50% Power-Added Efficiency
• FPD1050SOT89E: RoHS compliant
(Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPD1050SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 1050 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
24.5
16
TYP
26
17.5
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
PAE
NF
IP3
IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
50
0.9
1.1
37
39
40
260
320
385
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
520
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
270
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 1.05 mA
0.7
1.0
1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 1.05 mA
12
16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 1.05 mA
12
16
Thermal Resistance
RθJC
76
Note: T_AMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
%
dB
dBm
mA
mA
mS
µA
V
V
V
°C/W
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com