FPD1050 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 0.75W POWER PHEMT

FPD1050
0.75W POWER PHEMT
• FEATURES
♦ 28.5 dBm Linear Output Power at 12 GHz
♦ 11 dB Power Gain at 12 GHz
♦ 14 dB Maximum Stable Gain at 12 GHz
♦ 41 dBm Output IP3
♦ 45% Power-Added Efficiency
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (1X)
DRAIN
BOND
PAD (2X)
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 470 x 440 µm
DIE THICKNESS: 100 µm
BONDING PADS: >85 x 60 µm
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT),
featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD750 also features Si₃N₄ passivation and is also available in a low cost plastic
SOT89 plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Maximum Stable Gain (S₂₁/S₁₂)
P_1dB
MSG
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
27.5 28.5
14.0
Power Gain at P_1dB
Power-Added Efficiency
G_1dB
PAE
Output Third-Order Intercept Point IP3
(from 15 to 5 dB below P_1dB)
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS;
P_OUT = P_1dB
V_DS = 10V; I_DS = 50% I_DSS
Matched for optimal power
Tuned for best IP3
10.0 11.0
45
39
41
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
θ_JC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -5 V
V_DS = 1.3 V; I_DS = 1 mA
I_GS = 1 mA
I_GD = 1 mA
V_DS > 6V
250 315
520
280
15
1.0
16 18
16 18
45
Max Units
dBm
dB
dB
%
dBm
375 mA
mA
mS
µA
V
V
V
°C/W
Phone: [phone]
Fax: [phone]
http:// www.filcs.com
Revised: 8/05/04
Email: [e-mail]