FPD1000V Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 1W POWER PHEMT

PRELIMINARY
FPD1000V
1W POWER PHEMT
• FEATURES (1.8 GHz)
♦ 31 dBm Linear Output Power
♦ 16 dB Power Gain
♦ Useable Gain to 10 GHz
♦ 41 dBm Output IP3
♦ Maximum Stable Gain of 20 dB
♦ 50% Power-Added Efficiency
♦ 10V Operation / Plated Source Thru-Vias
DRAIN
BOND
PAD (2X)
• DESCRIPTION AND APPLICATIONS
GATE
BOND
PAD (2X)
DIE SIZE (µm): 650 x 800
DIE THICKNESS: 75µm
BONDING PADS (µm): >70 x 65
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.85 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 10V; I_DS = 200 mA
30 31
Γ_S and Γ_L tuned for Optimum IP3
Power Gain at dB Gain Compression G_1dB
V_DS = 10V; I_DS = 200 mA
14.5 16.0
Γ_S and Γ_L tuned for Optimum IP3
Maximum Stable Gain
MSG
V_DS = 10 V; I_DS = 200mA
20
S₂₁/S₁₂
P_IN = 0dBm, 50Ω system
Power-Added Efficiency
PAE
V_DS = 10V; I_DS = 200 mA
50
at 1dB Gain Compression
Γ_S and Γ_L tuned for Optimum IP3
3^rd-Order Intermodulation Distortion IM3
V_DS = 10V; I_DS = 200 mA
Γ_S and Γ_L tuned for Optimum IP3
P_OUT = 19 dBm (single-tone level)
-46
Max
-44
Units
dBm
dB
%
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
I_DSS
I_MAX
G_M
I_GSO
|V_P|
|V_BDGS|
|V_BDGD|
Θ_CC
V_DS = 1.3 V; V_GS = 0 V
V_DS = 1.3 V; V_GS ≅ +1 V
V_DS = 1.3 V; V_GS = 0 V
V_GS = -3 V
V_DS = 1.3 V; I_DS = 2.4 mA
I_GS = 2.4 mA
I_GD = 2.4 mA
See Note on following page
480 650 720 mA
1100
mA
720
mS
20 50 µA
0.7 0.9 1.4 V
6
8
V
20 22
V
22
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Email: [e-mail]