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FPD1000AS_1 Datasheet, PDF (1/11 Pages) Filtronic Compound Semiconductors – 1W PACKAGED POWER PHEMT
1W PACKAGED POWER PHEMT
FPD1000AS
Datasheet v3.0
FEATURES:
• 31 dBm Output Power (P1dB) @1.8GHz
• 15 dB Power Gain (G1dB) @ 1.8GHz
• 43 dBm Output IP3
• -42 dBc WCDMA ACPR at 21 dBm PCH
• 10V Operation
• 50% Power-Added Efficiency
• Evaluation Boards Available
• Suitable for applications to 5 GHz
GENERAL DESCRIPTION:
The FPD1000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics.
PACKAGE
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• Power applications in WLL/WLAN and
WiMax amplifiers
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Power Gain at 1dB Gain Compression
Maximum Stable Gain
S21/S12
Power-Added Efficiency
at 1dB Gain Compression
3rd-Order Intermodulation Distortion
ΓS and ΓL tuned for Optimum IP3
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance (channel-to-case)
G1dB
MSG
PAE
IM3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘCC
CONDITIONS
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 200mA
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 200 mA
POUT = 19 dBm (single-tone level)
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
IGD = 2.4 mA
See Note on following page
MIN
30
TYP MAX UNITS
31
dBm
13.5
15.0
20
dB
50
%
-46
dBc
480
650
800
mA
1100
mA
720
mS
20
50
µA
0.7
0.9
1.4
V
6
V
20
V
25
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com