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FPD1000AS Datasheet, PDF (1/8 Pages) Filtronic Compound Semiconductors – 1W PACKAGED POWER PHEMT
FPD1000AS
1W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 31 dBm Output Power (P1dB)
♦ 15 dB Power Gain (G1dB)
♦ 43 dBm Output IP3
♦ -42 dBc WCDMA ACPR at 21 dBm PCH
♦ 10V Operation
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Design Data Available on Website
♦ Suitable for applications to 5 GHz
• DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR
MARKING CODE
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 10V; IDS = 200 mA
30 31
ΓS and ΓL tuned for Optimum IP3
Power Gain at dB Gain Compression G1dB
VDS = 10V; IDS = 200 mA
13.5 15.0
ΓS and ΓL tuned for Optimum IP3
Maximum Stable Gain
MSG
VDS = 10 V; IDS = 200mA
20
S21/S12
PIN = 0dBm, 50Ω system
Power-Added Efficiency
PAE
VDS = 10V; IDS = 200 mA
50
at 1dB Gain Compression
ΓS and ΓL tuned for Optimum IP3
3rd-Order Intermodulation Distortion IM3
VDS = 10V; IDS = 200 mA
ΓS and ΓL tuned for Optimum IP3
POUT = 19 dBm (single-tone level)
-46
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
ΘCC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 2.4 mA
IGS = 2.4 mA
IGD = 2.4 mA
See Note on following page
480 650
1100
720
20
0.7 0.9
6
8
20 22
25
Max
800
50
1.4
Units
dBm
dB
%
dBc
mA
mA
mS
µA
V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:// www.filtronic.co.uk/semis
Revised: 05/26/05
Email: sales@filcsi.com