FPD10000AF Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 10W PACKAGED POWER PHEMT

PRELIMINARY
FPD10000AF
10W PACKAGED POWER PHEMT
• PERFORMANCE (1.8 GHz)
♦ 40 dBm Output Power (P_1dB)
♦ 11 dB Power Gain (G_1dB)
♦ -44 dBc WCDMA ACPR at 30 dBm output power
♦ 180 to 300 mA typical quiescent current (I_DQ)
♦ 55% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Additional Design Data Available on Website
♦ Usable Gain to 3.8GHz
SEE PACKAGE
OUTLINE FOR
MARKING CODE
• DESCRIPTION AND APPLICATIONS
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P_1dB
V_DS = 12V; I_DQ = 180 mA
40
Class B Operation
Power Gain at dB Gain Compression G_1dB
V_DS = 12V; I_DQ = 180 mA
10
V_DS = 12V; I_DQ = 300 mA
11
Maximum Stable Gain: S₂₁/S₁₂
MSG
V_DS = 12 V; I_DQ = 180 mA
16.5
P_IN = 0dBm, 50Ω system
V_DS = 12 V; I_DQ = 300 mA
18.0
Power-Added Efficiency
PAE
V_DS = 12V; I_DQ = 180 mA
55
at 1dB Gain Compression
I_RF (drive-up current) ~ 1.5A
Adjacent Channel Power Ratio
V_DS = 12V; I_DQ = 180 mA
WCDMA BTS Forward (64 channels) ACPR
Channel power = 30 dBm
-44
10.15 dB Pk/Avg 0.001%
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
I_DSS
I_GSO
|V_P|
|V_BDGD|
Θ_CC
V_DS = 3.0 V; V_GS = 0 V
V_GS = -3 V
V_DS = 3.0 V; I_DS = 19 mA
I_GD = 19 mA
See Note on following page
5.2
3
1.1
30 35
3.5
Max
Units
dBm
dB
dB
%
dBc
A
mA
V
V
°C/W
Phone: [phone]
Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Email: [e-mail]