FP750SOT343 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED LOW NOISE, MEDIUM POWER PHEMT

PRELIMINARY DATA SHEET _FP750SOT343
PACKAGED LOW NOISE, MEDIUM POWER PHEMT
• FEATURES
♦ 0.5 dB Noise Figure at 2 GHz
♦ 21 dBm P-1dB 2 GHz
♦ 17 dB Power Gain at 2 GHz
♦ 33 dBm IP3 at 2 GHz
♦ 45% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS
The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring low noise figure, medium output power
and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by
electron-beam photolithography. The FP750’s active areas are passivated with Si₃N₄, and the
SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for
PCS and GSM base station front-ends.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
Saturated Drain-Source Current
I_DSS
V_DS = 2 V; V_GS = 0 V
180 220 265 mA
Power at 1-dB Compression
P-1dB f=2GHz; V_DS = 3.3 V; I_DS = 110mA 20 21
dBm
Power Gain at 1-dB Compression G-1dB f=2GHz; V_DS = 3.3 V; I_DS = 110mA 16 17
dB
Power-Added Efficiency
Noise Figure
PAE
f=2GHz; V_DS = 3.3 V;
I_DS = 110mA; P_OUT = 21 dBm
NF
f=2GHz; V_DS = 3.3V; 40mA
45
%
0.4
dB
f=2GHz; V_DS = 3.3V; I_DS = 60mA
0.5
dB
f=2GHz; V_DS = 3.3V; 110mA
0.7
dB
Output Third-Order Intercept Point IP3
V_DS = 3.3V; I_DS = 110mA
33
dBm
Transconductance
G_M
V_DS = 2 V; V_GS = 0 V
170 220
mS
Gate-Source Leakage Current
I_GSO
V_GS = -5 V
5 35 µA
Pinch-Off Voltage
V_P
V_DS = 2 V; I_DS = 2 mA
-1.2
V
Gate-Source Breakdown
Voltage Magnitude
|V_BDGS|
I_GS = 2 mA
10 12
V
Gate-Drain Breakdown
Voltage Magnitude
|V_BDGD|
I_GD = 2 mA
10 13
V
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Revised: 2/01/02
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