FMS2013 Datasheet, PDF (1/5 Pages) Filtronic Compound Semiconductors – SPDT GaAs High Isolation Absorptive Switch DC-4 GHz

Preliminary Data Sheet ^2.1
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Features:
♦ Available as RF Known Good Die
♦ Excellent low control voltage performance
♦ Excellent harmonic performance
♦ Very high isolation >49dB typ. up to 4GHz
♦ Very low Tx Insertion loss <1.0 dB at 4GHz
Functional Schematic
V2
V1
RFIN
RF01
RF02
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications: (T_OP = 25°C,V_ctrl = 0V/2.5V, Z_IN = Z_OUT = 50Ω)
Parameter
Test Conditions
Min Typ
Tx Insertion Loss
Rx Insertion Loss
Return Loss
VSWR On State
VSWR Off State
Isolation at 4 GHz
2nd Harmonic Level
Switching speed
4GHz
4GHz
4GHz
4GHz
4GHz
4GHz
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
Pin = 21dBm, 10% to 90% RF
1.0
1.0
15
1:1.3
1:1.4
49
-72
-68
30
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).
Max
Units
dB
dB
dB
dB
dBc
dBc
ns
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: [phone] Fax: [phone] Email: [e-mail]
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Website: www.filcs.com