FMS2002QFN Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – SP3T Reflective pHEMT MMIC Switch

Preliminary Data Sheet^1.0
FMS2002QFN ES1
SP3T Reflective pHEMT MMIC Switch
Description
The FMS2002QFN is a linear high power Single-Pole Three-Throw
MMIC Antenna Switch designed for use in Dual-band handsets
GSM900 and GSM1800/1900 combinations. The switch is designed
with one antenna port that can be routed to any one of the three RF
ports.
Features
· Low insertion loss (0.5dB @ 900 MHz)
· Operation down to 2V control
· 3 control lines. Single positive voltage supply
· Low harmonics (Typical -73dBc at Pin=+34.5dBm)
· High Isolation (30 dB @ 900 MHz)
· Filtronic Advanced GaAs pHEMT Technology
Electrical Characteristics (at 25C°, [Vctrl 0,+2.7V], 50 Ohm system, under CW )
Parameter
Symbol Condition
Min.
Typ.
Max.
Unit
Insertion Loss
IL
1
0.45
dB
2
0.55
dB
3
0.5
dB
Isolation –
ISO
1
35
dB
RF – Ant on.
2
26
dB
S11
S11
1
-25
dB
S11
S11
2
-18
dB
Harmonics
2fo
3
-74
dBc
3fo
3
-73
dBc
Leakage Current - Tx IlkTx
3
2.9
mA
Leakage Current – Rx IlkRx
3
3.2
mA
Condition
1
Small signal, DC – 1GHz, Vctrl = 2.7V/0V
2
Small signal, 1-2 GHz, Vctrl = 2.7V/0V
3
Input power=34.5dBm, EGSM Tx 880-915MHz, Vctrl=2.7V/0V
GaAs MMIC’s are ESD sensitive devices. Special handling precautions are required.
Truth Table
Operation
Vctrl 1
RF1-Ant
HIGH
RF2-Ant
0
RF3-Ant
0
Control Voltage
Vctrl 2
Vctrl 3
0
0
HIGH
0
0
HIGH
Control values
Control
Min
Typ.
Max
Unit
High
-
2.7
-
V
Low
-
0.0
-
V
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors (UK) Contact Details: Tel: [phone] Fax: [phone] Email: [e-mail]
(USA) Contact Details: Tel: [phone] Fax: [phone] Email: [e-mail] World Website: www.filcs.com