FMA3051 Datasheet, PDF (1/6 Pages) Filtronic Compound Semiconductors – 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER

12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER
FMA3051
Pilot Datasheet v2.1
FEATURES
FUNCTIONAL SCHEMATIC
• 35 dB Gain
• 30 dBm P_1dB Output Power at 6 V, 1.2 A
• 40 dBm OIP3
• pHEMT Technology
• On-chip output power detector
• 5 x 3 sq. mm die
GENERAL DESCRIPTION
The FMA3051 is a high performance
12.5-15.5 GHz Gallium Arsenide monolithic
amplifier. It is suitable for use in point-to-
multipoint communications, sat-com and
electronic warfare applications. The die is
fabricated using the Filtronic 0.25 µm process.
The balanced design offers high output power
with low return losses. Power detection is
achieved with an on-chip coupled detector
associated with diode reference voltage. The
circuit is DC blocked at both the RF input and
the RF output.
D1 D2 D3 D4
RF IN
G2 G3 G4
D1 D2 D3 D4
G2 G3 G4
TYPICAL APPLICATIONS
• Point-to-point radio
• Point-to-multipoint radio
• Sat-com
• Electronic Warfare
RF OUT
DET
ELECTRICAL SPECIFICATIONS
PARAMETER
Small Signal Gain
Input Return Loss
Output Return
Loss
Output Power at
1dB compression
point
Output IP3
Drain Current
Typical gate
voltage
CONDITIONS
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
12.5-15.5 GHz, Vd = 6 V, 1200 mA
6.0 V
Note: T_AMBIENT = +25°C, Z₀ = 50Ω
Performance for on-wafer measurements
MIN
TYP MAX UNITS
32
35
36
dB
-12 -10 dB
-15 -12 dB
30
33
35 dBm
40
dBm
800 1100 1400 mA
-0.5
-0.4 -0.3
V
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com