FMA3018QFN Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – MEDIUM LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE

FMA3018QFN
MEDIUM LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE ^{Preliminary Datasheet v2.1}
FEATURES (1.7-2.0GHZ):
• Balanced low noise amplifier module
• No external couplers required
• Excellent 40 dBm Output IP3
• 25 dBm Output Power (P1dB)
• Excellent Return Loss (RL): -25dB
• 14.5 dB Small-Signal Gain (SSG)
• 1.2 dB Noise Figure
• 5 V supply (240mA current)
• Cost effective footprint: 4mm x 4mm QFN
• 6 mm x 6mm evaluation board available
• RoHS compliant: (Directive 2002/95/EC)
BOARD PHOTOGRAPH:
GENERAL DESCRIPTION:
The BA1500QFN MMIC module is a self-
biased, integrated and packaged balanced
amplifier mounted onto 6x6mm² FR4 board.
The active device is a pair of pseudomorphic
High Electron Mobility Transistors (pHEMT)
specifically optimised for balanced
configuration systems. The Filtronic 0.25µm
process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for a cost effective total
system implementation.
TYPICAL APPLICATIONS:
• Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
• High intercept-point LNAs
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Frequency
Freq
Minimum Noise Figure
NF
Input Third-Order Intercept Point
IIP3
Small-Signal Gain
Small-Signal Input Return Loss
Small-Signal Output Return Loss
Power at 1dB Gain Compression
Note: T_AMBIENT = 22°C
SSG
S11
S22
P1dB
CONDITIONS
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
VDS = 5.0 V; IDS = 240mA
MIN
1.7
1.2
24
14
-25
-25
24.5
TYP
1.85
1.3
25.5
MAX
2
1.6
26.5
UNITS
GHz
dB
dBm
14.5
15.5
-23
-20
-23
-22
25
25.5
dB
dB
dB
dBm
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com