FMA219_1 Datasheet, PDF (1/5 Pages) Filtronic Compound Semiconductors – X-BAND LNA MMIC

X-BAND LNA MMIC
FEATURES:
• 7.0 – 11.0 GHz Operating Bandwidth
• 1.1 dB Noise Figure
• 21 dB Small-Signal Gain
• 12 dBm Output Power
• +3V Single Bias Supply
• DC De-coupled Input and Output Ports
GENERAL DESCRIPTION:
The FMA219 is a 2-stage, reactively matched
pHEMT low-noise MMIC amplifier designed for
use over 7.0 to 11.0 GHz. The amplifier
requires a single +3V supply and one off-chip
component for supply de-coupling. Both the
input and output ports are DC de-coupled.
Grounding of the amplifier is provided by
plated thru-vias to the bottom of the die, no
additional ground is required. The amplifier is
unconditionally stable over all load states (-45
to +85°C), and conditionally stable if the input
port is open-circuited.
LAYOUT:
FMA219
Datasheet v3.0
TYPICAL APPLICATIONS:
• Low noise front end amplifiers
• General X-Band gain block
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Operating Frequency Bandwidth
BW
Small Signal Gain
S21
Operating Current
Small Signal Gain Flatness
Noise Figure
IOP
∆S21
NF
3rd Order Intermodulation Distortion
IMD
Power at 1dB Compression
Input Return Loss
Input Return Loss @ 9.5GHz + 10GHz
Output Return Loss
Reverse Isolation
Note: T_AMBIENT = 22°C
P1dB
S11
S11(9.5+10GHz)
S22
S12
CONDITIONS
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
No RF input
VDD = +3 V IDD = IOP
VDD = +3 V, IDD = IOP
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
VDD = +3 V
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
VDD = +3 V IDD = IOP
MIN
7
19
50
11.5
TYP
21
65
±0.5
1.1
MAX
11
23
UNITS
GHz
dB
80
mA
±0.8
1.4
dB
-47
12.5
-7
-3
-4
-16
-10
-40
-30
dBc
dBm
dB
dB
dB
dB
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com