FMA219 Datasheet, PDF (1/5 Pages) Filtronic Compound Semiconductors – X-BAND LNA MMIC

PRELIMINARY
• PERFORMANCE
♦ 7.0 – 11.0 GHz Operating Bandwidth
♦ 1.5 dB Noise Figure
♦ 21 dB Small-Signal Gain
♦ 12 dBm Output Power
♦ +3V Single Bias Supply
♦ DC De-coupled Input and Output Ports
FMA219
X-BAND LNA MMIC
• DESCRIPTION AND APPLICATIONS
The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use
over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip
component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding
of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is
required.
Typical applications include low-noise front end amplifiers, and general gain block utilizations in X-
band. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally
stable if the input port is open-circuited.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Operating Frequency Bandwidth
BW
Small Signal Gain
S₂₁
Operating Current
I_OP
Small Signal Gain Flatness
∆S₂₁
Noise Figure
NF
3^rd-Order Intermodulation Distortion IMD
Power at 1dB Compression
P_1dB
Input Return Loss
S₁₁
Output Return Loss
S₂₂
Reverse Isolation
S₁₂
Test Conditions
V_DD = +3 V I_DD = I_OP
V_DD = +3 V I_DD = I_OP
No RF input
V_DD = +3 V I_DD = I_OP
V_DD = +3 V, I_DD = I_OP
V_DD = +3 V, I_DD = I_OP
P_OUT = +1.5 dBm SCL
V_DD = +3 V
V_DD = +3 V I_DD = I_OP
V_DD = +3 V I_DD = I_OP
V_DD = +3 V I_DD = I_OP
Min Typ Max Units
7
11 GHz
19 21 23 dB
50 65 85 mA
±0.5 ±0.8
1.5 1.7 dB
-47
dBc
11.5 12.5
dBm
-7
-3
dB
-16 -10 dB
-40 -30 dB
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Fax: [phone]
http://www.filtronic.co.uk/semis
Revised: 11/22/04
Email: [e-mail]