EB750SOT343BA Datasheet, PDF (1/1 Pages) Filtronic Compound Semiconductors – FP750SOT343 1.85GHz LNA EVALUATION BOARD

FEATURES
• 19 dBm Output Power
• 17 dB Small Signal Gain
• 0.8 dB Noise Figure
• 37 dBm IP3
• Bias 3.3V, 110mA
EB750SOT343BA
FP750SOT343 1.85GHz LNA EVALUATION BOARD
DESCRIPTION AND APPLICATIONS
This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
matched at a frequency of 1.85 GHz. The active device is a Filtronic FP750SOT343; a
double-heterojunction, 750 µm gate periphery PHEMT. The connectors are SMA jacks
soldered to a 30 mil thick FR4 PC Board. Both RF ports are DC-decoupled.
Biasing can be applied through test clips (E-Z hooks) at the bias vias on the bottom of the
board. A negative gate voltage is required for current limiting. Ground connection should
be established prior to the gate and drain bias connections. This board is thin and flexible,
so caution should be exercised when connecting it to coaxial cables.
SCHEMATIC
FP750SOT343 EVAL Board -Vg
Schematic
@ 1.85GHz
0.01uF
15pF
200 Ohm
Vd
1.0uF
0.01uF
15pF
33pF
22 nH ^{22 nH}
L1
L2
33pF
RF IN
RF OUT
C2
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