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FMP3217BAX Datasheet, PDF (2/12 Pages) FIDELIX – 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FMP3217BAx
CMOS LPRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES
• Process Technology : Full CMOS
• Organization : 2M x 16
• Power Supply Voltage : 2.7~3.3V
• Low Power & Page Modes
FMP3217BA1 : support the PASR/DPD function
FMP3217BA2 : support the Direct DPD function
FMP3217BA4 : support the PASR/DPD/PAGE function
FMP3217BA5 : support the Direct DPD/PAGE function
• Operating Temperature Ranges:
Special (-10’C to +60’C)
Commercial (0’C to +70’C)
Extended (-25’C to +85’C)
Industrial (-40’C to +85’C)
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm2
FMP3217BAx-FxxX : Normal
FMP3217BAx-GxxX : Pb-Free
FMP3217BAx-HxxX : Pb-Free & Halogen Free
• Separated I/O power(VCCQ) & Core Power(VCC)
• Page read/write operation by 16 words
(FMP3217BA4, FMP3217BA5)
• DPD mode by using MRS only
(FMP3217BA1, FMP3217BA4)
• Direct DPD mode when /ZZ goes low
(FMP3217BA2, FMP3217BA5)
PRODUCT FAMILY
Product Family
Operating
Voltage (V)
Speed
Min. Typ. Max.
ICC1
f = 1MHz
Typ.
Max.
Power Dissipation
ICC2
f = fmax
Typ.
Max.
ISB1
(CMOS Standby
Current)
Typ.
Max.
FMP3217BAx-H60E
FMP3217BAx-H70E
2.7 3.0 3.3
60ns
70ns
1.5mA
3mA
15mA
12mA
20mA
80uA
120uA
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C.
2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
3. Operating Temperature Range: S (-10’C~60’C), C(0’C~70’C), E(-25’C~85’C), I (-40’C~85’C)
PIN DESCRIPTION
1
23
4
5
6
FUNCTIONAL BLOCK DIAGRAM
A
/LB /OE A0
A1 A2
/ZZ
B
I/O9 /UB A3
A4 /CS I/O1
C
I/O10 I/O11 A5
A6 I/O2 I/O3
D
VSS I/O12 A17
A7 I/O4 VCC
E
VCCQ I/O13 DNU A16 I/O5 VSS
F
I/O15 I/O14 A14 A15 I/O6 I/O7
G
I/O16 A19 A12 A13 WE I/O8
H
A18
A8
A9
A10 A11 A20
48-FBGA : Top View(Ball Down)
Name
Function
Name
Function
/ZZ
Low Power Modes VCC
Core Power
/CS
Chip Select Input VCCQ
I/O Power
/OE
Output Enable Input VSS
Ground
/WE
Write Enable Input /UB Upper Byte(I/O9~16)
A0~A20
Address Inputs
/LB Lower Byte(I/O 1~8)
I/O1~I/O16 Data Inputs/Outputs DNU
Do Not Use
2
Row
Addresses
Clk gen.
Row
select
Precharge circuit.
Memory array
VCC
VSS
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
/CS
/OE
/WE
Control Logic
/UB
/LB
/ZZ
Revision 0.3
Feb. 2007