FMF4N60 Datasheet, PDF (3/7 Pages) First Components International – 4A 600V N CHANNEL ISOLATED POWER MOSFET

FMF4N60 4A 600V N CHANNEL ISOLATED POWER MOSFET
Typical Characteristics
10^{1 Top :}
15V.0^GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
※ Notes :
1. 250µs Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
12
10
V_GS = 10V
8
6
V_GS = 20V
4
2
※ Note : T_J = 25℃
0
0
2
4
6
8
10
12
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
500
C_oss
※ Notes :
C_rss
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
10⁰
25^oC
10^-1
2
-55^oC
※ Notes :
1. V_DS = 40V
2. 250µs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 120V
10
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 4.0 A
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics