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FMS05P30B Datasheet, PDF (2/2 Pages) First Components International – 30V P-Channel Enhancement-Mode MOSFET
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FMS05P30B 30V P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Rg
Forward Transconductance
gfs
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Test Condition
VGS = 0V, ID = -250uA
VGS = -4.5V, ID = -4.2A
VGS = -10V, ID = -5.3A
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = +20V, VDS = 0V
VDS = -15V, ID = -5.3A
VDS = -15V, ID = -5.3A
VGS = -10V
VDD = -15V, RL = 15Ω
ΙD = −1Α, VGEN = -10V
RG = 6Ω
VDS = -15V, VGS = 0V
f = 1.0 MHz
IS = -5.3A, VGS = 0V
Min Typ Max
-30
-
-
56.0 70.0
33.0 42.0
-1.0 -1.7
-3.0
-1
+ 100
4
7
18.09
6.25
3.25
20.52
4.43
42.81
7.35
1047.98
172.82
115.50
-1.9
-1.3
Unit
V
mΩ
V
uA
nA
Ω
S
nC
ns
pF
A
V
August '05 Rev 2
2