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FMBT3904 Datasheet, PDF (2/2 Pages) Formosa MS – NPN EPITAXIAL PLANAR TRANSISTOR
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Data Sheet
FMBT3904 NPN General
Purpose Transistor
Electrical Characteristics @ 25oC
Off Characteristic
Collector - Emitter Breakdown Voltage (Note 3)
(IC = 1.0mAdc, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10µAdc, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10µAdc, IC = 0)
Base Cutoff Current
(VCE = 30Vdc, VEB = 3.0Vdc)
Collector Cutoff Current
(VCE = 30Vdc, VEB = 3.0Vdc)
On Characteristic
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector - Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base - Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Small-Signal Characteristic
Current - Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small - Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 µAdc, RS = 1.0 kΩ, f = 1.0 kHz)
Switching Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = -10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
IBL
ICEX
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
40
60
6.0
---
---
Min
40
70
100
60
30
---
---
0.65
---
300
---
---
1.0
0.5
100
1.0
---
---
---
---
---
Max
---
---
---
50
50
Max
---
---
300
---
---
0.2
0.3
0.85
0.95
---
4.0
8.0
10
8.0
400
40
5.0
35
35
200
50
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Unit
---
Vdc
Vdc
MHz
pF
pF
kΩ
x10-4
---
µmhos
dB
ns
ns