TIP32CM Datasheet, PDF (1/1 Pages) First Components International – Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A)

General Description:
Silicon epitaxial chip of p-n-p medium power transistor (Ic max=3A)
used for general-purpose amplifier and switching application.
Complementary pair TIP31C
Wafer Diameter -- 100 mm
Wafer thickness -- 270 ± 20 µm;
Die size
-- 1.7 x 1.7 mm ;
Metallization:
Top -- Al 4.5 ± 0.5 µm
Bottom -- Ti-Ni-Ag
Ti = 0.1 ± 0.02 µm
Ni = 0.5 ± 0.1 µm
Ag = 0.6 ± 0.1 µm
Bondpad size:
1. Base
0.4 x 0.3 mm
2.Emitter 0.312 x 0.312 mm
Recommended ultrasonic bonding wire Al
Emitter - 2 wire dia 80 µm
Base - 1 wire dia 80 µm
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER (Ta=25°C)
Parameter
Symbol Unit Measurement Mode
Min
Max
Collector cutoff
Current
Iceo mA
Vce=45V; Ib=0
0.3
Collector cutoff
Current
Emitter cutoff
Current
Collector – Emitter
Sustaining
Ices mA Vce=60V; Ube=0
0.2
Iebo mA
Veb=5,0 V; Ic=0
1.0
Vceo
(sus)
V
Ic=30 mA, Ib=0
60
DC Current Gain(1) **
h_FE
Vce=4V; Ic=1A
100
Small-Signal Current Gain **
h_fe
Vce=10V; Ic=0,5 A
f=1kHz
20
Collector-Emitter
Saturation Voltage(1)
Vce(sat) V
Ic=1A; Ib=35mA
0.5
Base- Emitter
On Voltage(1) **
Vbe(on) V
Vce=4 V; Ic=3 A
1.8
1.Pulse Tests: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%
2.** In a circuit with common base Ucb= Uce-1v ; Ie=Ic