S8550 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC S8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC S8050
1
TO-92
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-30
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-5
Collector Dissipation(Ta=25°C)
Pc
1
Collector Current
Ic
-700
Junction Temperature
Tj
150
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=-100µA,IE=0
-30
Collector-Emitter Breakdown Voltage BVCEO
Ic=-1mA,IB=0
-20
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA,Ic=0
-5
Collector Cut-Off Current
ICBO
VCB=-30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=-5V,Ic=0
DC Current Gain(note)
hFE1
VCE=-1V,Ic=-1mA
100
hFE2
VCE=-1V,Ic=-150 mA
120
hFE3
VCE=-1V,Ic=-500mA
40
Collector-Emitter Saturation Voltage VCE(sat)
Ic=-500mA,IB=-50mA
Base-Emitter Saturation Voltage
VBE(sat)
Ic=500mA,IB=-50mA
Base-Emitter Saturation Voltage
VBE
VCE=-1V,Ic=-10mA
Current Gain Bandwidth Product
fT
VCE=-10V,Ic=-50mA
100
Output Capacitance
Cob
VCB=10V,IE=0
f=1MHz
TYP
110
9.0
MAX
-1
-100
400
-0.5
-1.2
-1.0
UNIT
V
V
V
µA
nA
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-014,A