PA10SD Datasheet, PDF (1/2 Pages) First Components International – 1.0 Amp Silicon Controlled Rectifiers Sensitive gate trigger current.

Descriptions
Mechanical Dimensions
SOT-89
Dimmension in mm
FEATURES
■．Driven directly with IC and MOS device.
■．Feature proprietary, void-free glass passivated chips.
■．Available in voltage ratings from 200 to 600 volts. (VDRM and VRRM)
■．Sensitive gate trigger current.
■．Designed for high volume, line-powered control application in relay lamp drivers, small
motor controls, gate drivers for large thyristors.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETERS
Repetitive Peak Off-State Voltage and
Repetitive Peak Reverse Voltage (1)
RMS On-State Current at Ta=57℃ and Conduction
Angle of 180º
Peak Surge (Non-Repetitive)On-State Current,
½ Cycle ,at 50Hz or 60Hz
Peak Gate-Trigger Current for 3µ sec , Max
Peak Gate-Power Dissipation at IGT≦IGTM
Average Gate-Power Dissipation
Peak gate reverse voltage
Peak Off-State Current, (1)Ta=25℃
VDRM & VRRM=Max. Rating Ta=125℃
Maximum On-State Voltage. (Peak)
At Tc=25℃ and IT =Rated Amps
SYMBOL
VDRM
&
VRRM
I_T(RMS)
I_TSM
I_GTM
P_GM
P_G(AV)
V_RGM
I_DRM &
I_RRM
V_TM
DC Holding Current,(1)
Critical Rate-Of-Rise of off-State Voltage.(1)
Gate Open,Ta=110℃
DC Gate –Trigger Current for Anode Voltage=7VDC,
RL=100Ω
I_HO
Critical
dv/dt
I_GT
PA10SD
1.0
8
1.0
0.1
0.01
6
10
200
1.7
10
5
200
V
UNITS
400
VOLT
AMP
AMP
AMP
WATT
WATT
V
µA
MAX
VOLT
MAX
mA
MAX
V/µ sec
µA
MAX
DC Gate –Trigger Voltage for Anode Voltage=7VDC,
RL=100Ω
V_GT
0.8
VOLT
MAX
Gate-Controlled Turn-on Time tD+tR IGT=10mA
Thermal Resistance , Junction-to-Ambient
Storage Temperature range
Operating Temperature Range , Tj
Tgt
RθJ-A
Tstg
Toper
2.2
70
-40 to + 150
-40 to + 110
µ sec
℃/WATT
TYP
℃
℃
(1)RGK=1KΩ