MMBT3906 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP switching transistor

200mW PNP Bipolar Transistors
Description
Mechanical Dimensions
SOT-23
Dimensions in mm
Feature
* Power Dissipation Pcm= 200 mW (Ta=25C)
* Collector Current Icm=0.2A
* Collector-base Voltage Vbr (cbo)= 40V
* Operating and Storage Junction Temperature Range Tj. Tstg: -55C ~ +150C
* Marking 2A
Max Ratings at Ta=25C Unless Otherwise Specified
Parameter
Symbol Test Condition
Collector-base breakdown Voltage _{Vbr(cbo) Ic=100uA, Ie=0}
Collector-Emitter breakdown Voltage _{Vbr(ceo) Ic=1mA, Ib=0}
Emitter-base breakdown Voltage
Vbr(ebo) Ie=100uA, Ic=0
Collector cut- off current
Icbo
Vcb=60V, Ie=0
Base cut- off current
Iceo
Vce=40V, Ib=0
Emitter cut- off current
Iebo
Veb=5V, Ic=0
DC current Gain
HFE1 _{Vce=10V, Ic=1mA}
DC current Gain
HFE2 _{Vce=1V, Ic=50mA}
Collector-Emitter Saturation Voltage Vce(sat) Ic=50mA, Ib=5mA
MIN
40
40
6
100
60
MAX
0.1
0.1
0.1
300
0.3
Unit
V
V
V
uA
uA
uA
V
Base-Emitter Saturation Voltage
Transition Frequency
Delay Time/ Rise Time
Storage Time / Fall Time
Vbe(sat)
fT
td / tr
ts / tf
Ic=50mA, Ib=5mA
Vce=20V,
Ic=10mA,
f=100MHz
Vcc=3.0Vdc,
Vbe=-0.5Vdc
Ic=10mAdc,
Ib1=1.0mAdc
Vcc=3.0Vdc,
Ic=10mAdcc
Ib1=Ib2=1.0mAdc
0.95
250
35/35
200/50
V
MHz
nS
nS