IRFZ44N Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

IRFZ44N 55A 50V N CHANNEL POWER MOSFET
APPLICATION
‹ Buck Converter High Side Switch
‹DC motor control , Ups ...etc , & other Application
VDSS
55V
RDS(ON) Max.
17.5mȍ
ID
50A
PIN CONFIGURATION
TO-220
Front View
D
FEATURES
‹Ultra Low ON Resistance
‹Low Gate Charge
‹ Dynamic dv/dt Rating
‹ Inductive Switching Curves
‹ Peak Current vs Pulse Width Curve
SYMBOL
D
G
G
DS
ʳ
ABSOLUTE MAXIMUM RATINGS
S
N-Channel MOSFET
DIMENSION IN MM
Rating
Drain to Source Voltage
Drain to Current Ё Continuous Tc = 25к, VGS@10V
Ё Continuous Tc = 100к, VGS@10V
Ё Pulsed Tc = 25к, VGS@10V (Note 1)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derating Factor above 25к
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Repetitive Avalanche Energy (Note 1)
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Avalanche Current (Note 1)
Symbol
VDSS
ID
ID
IDM
VGS
PD
dv/dt
TJ, TSTG
EAR
TL
TPKG
IAR
Value
55
50
35
160
±20
.94
0.63
5.0
-55 to 175
9.4
300
260
25
Unit
V
A
V
W
W/к
V/ns
к
mJ
к
к
A
THERMAL RESISTANCE
Symbol
Parameter
RșJC
Junction-to-case
Min Typ
RșJA
Junction-to-ambient
Max
1.5
62
Units
к/W
к/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +175к
1 cubic foot chamber, free air