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IRF730 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
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IRF730 6.0A 400V N CHANNEL POWER MOSFET
Description
Case
Mechanical Dimensions
D
G 12
D
3
S
TO-220
G
S
Dimension in mm
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
ʳ
FEATURES
 Higher Current Rating
 Lower rDS(ON), Lower Capacitances
 Lower Total Gate Charge
 Tighter VSD Specifications
 Avalanche Energy Specified
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ð Continuous
Ð Pulsed (Note 1)
Gate-to-Source Voltage Ð Continue
Total Power Dissipation
Derate above 25к
Single Pulse Drain-to-Source Avalanche Energy РTJ = 25к
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25È)
Operating and Storage Temperature Range
Thermal Resistance Ð Junction to Case
Ð Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â from case for 10 seconds
Symbol
ID
IDM
VGS
PD
EAS
TJ, TSTG
ÈJC
ÈJA
TL
Value
6.0
21
±20
96
0.77
180
-55 to 150
1.70
62
300
Unit
A
V
W
W/к
mJ
к
к/W
к
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