IRF640 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF640 18A 200V N CHANNEL POWER MOSFET
Description
Mechanical Dimensions
G
DS
TO-220AB
DIMENSION IN MM
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
‹ Silicon Gate for Fast Switching Speeds
‹ Low RDS(on) to Minimize On-Losses. Specified at Elevated
Temperature
‹ Rugged – SOA is Power Dissipation Limited
‹ Source-to-Drain Characterized for Use With Inductive
Loads
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
Value
18
72
±20
±40
125
1.00
-55 to 150
224
1.00
62.5
260
Unit
A
V
V
W
W/к
к
mJ
к/W
к
(1) Pulse Width and frequency is limited by TJ(max) and thermal response