IRF4N60 Datasheet, PDF (1/3 Pages) Suntac Electronic Corp. – POWER MOSFET

IRF4N60 4.0A 600V N CHANNEL POWER MOSFET
Description
Case _D
Mechanical Dimensions
GD¹ _2S3
TO-220AB
DIMENSION IN MM
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
‹
withstand high energy in the avalanche mode and switch ‹
efficiently. This new high energy device also offers a
‹
drain-to-source diode with fast recovery time. Designed for ‹
high voltage, high speed switching applications such as
‹
power supplies, converters, power motor controls and
‹
bridge circuits.
ABSOLUTE MAXIMUM RATINGS
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Drain to Current Ё Continuous
Rating
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
Value
4.0
18
±20
±40
96
38
-55 to 150
80
1.70
62
300
Unit
A
V
V
W
к
mJ
к/W
к