FMT6401 Datasheet, PDF (1/3 Pages) First Components International – 12V P-Channel Enhancement-Mode MOSFET

FMT6401 12V P-Channel Enhancement-Mode MOSFET
P CHANNEL ENCHANCEMENT MODE POWER MOSFET
Description:
THE FMT6401 provides the designer with the best combinateation of fast switching,
low on-resistance and cost- effectiveness.
The FMT6401 is universally preferred for all commercial-industrial surface mount
applications and suited for low voltage applications such as DC/DC converters
Features:
Applications:
Ultra low Rdson
Power Management in Notebook Computer
Fast Switching
Portable Equipment
1.8V Gate Rated
Battery Powered System.
FMT6401
BVdss= -12V
I d= - 4.3A
Rdson=50mΩ
SOT-23
Marking
Dimmensions in mm
Absolute Maximum Rating
Parameter
Drain- Source Voltage
Gate-Source Voltage
Continuous Drain Current @ Ta=25C
Continuous Drain Current @ Ta=70C
Pulse Drain Current
Power Dissipation @25C
Linear Derating Factor
Operating Junction & Stortage Temp. Range
Thermal resistance Junction-Ambient
Symbol
Vds
Vgs
Id
Id
Idm
Pd
Tj & Tstg
Rthj-a
Rating
-12
±8
-4.3
-3.4
-12
1.38
0.01
-55to +150
90
Unit
V
V
A
A
A
W
W/℃
℃
W/℃
Remark
MIN TYP. MAX Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current @Tj=25C
Drain-Source Leakage Current @Tj=70C
BVdss
△BVdss/△Tj
Vgs(th)
Gfs
Igss
Idss
Idss
-12
-0.01
-1.0
12
± 100
-1
-25
V
V/℃
V
S
nA
uA
uA
Vgs=0. Id= -250uA
Id=1mA @25C
Vds=Vgs, Id=-250uA
Vds=-5.0V, Id=-4.0A
Vgs=± 8
Vds=-16V, Vgs=0
Vds=-12V, Vgs=0
Absolute Maximum Rating
Parameter
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On-Voltage
Reverse Recovery time
Reverse Recovery Charge
Symbol
Rdson
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Vsd
Trr
Qrr
Rating
50
85
125
15 24
1.3
4
8
11
54
36
985
180
160
-1.2
39
26
Unit
mΩ
nC
ns
pF
V
nS
nC
test conditions
Vgs=-4.5V,Id=4.3A
Vgs=-2.5V,Id=2.5A
Vgs=-1.8V,Id=2.0A
Id=-4.0A
Vds=-12V
Vgs=-4.5V
Vds=-10V
Id=1A
Vgs=-10V
Rg=3.3Ω, Rd=10Ω
Vgs=0V
Vds=-15V
f=1.0MHZ
Is=-1.2A, Vgs=0V
Is=-4.0A, Vgs=0
dI/dt=100A/us
Notes:1. Pulse width Liited by max. junction temperature
Notes:2. Pulse width <=300us, duty cycle<=2%
Notes:3. Surface mounted on 1 in² copper pad of FR4 board; 270C/W when mounted on min. copper pad