FMP06N20 Datasheet, PDF (1/2 Pages) First Components International – Diode

FMP06N20 20V N-Channel Enhancement-Mode Mosfet
V_DS= 20V, I_D=6A
R_{DS(ON), Vgs@2.5V, Ids@5.2A} = 40mΩ
R_{DS(ON), Vgs@4.5V, Ids@6A} = 28mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Fully Characterized Avalanche Voltage and Current
Ideal for Li ion battery pack applications
TSOP-6
Internal Schematic Diagram
Drain2
Gate2
Source2
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
+ 12
Continuous Drain Current
I_D
6
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_DM
30
P_D
2.0
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJA
62.5
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Unit
V
A
W
o_C
o_C/W
August '05 Rev 2
1