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| FMMT458 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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Data Sheet
Description
3
2
2
1
SOT-23
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Device Dissipation
TA = 25oC
Junction and Storage Temperature
Electrical Characteristics @ 25oC
Characteristic
Collector - Emitter Breakdown Voltage
(IC = 10mA)
Collector - Base Breakdown Voltage
(IC = 100µA)
Emitter - Base Breakdown Voltage
(IE = 100µA)
Collector Cutoff Current
(VCB = 320V, IE = 0)
Emitter Cutoff Current
(VEB = 4.0V, IC = 0)
Static Forward Current Transfer Ratio
(IC = 1.0 mA, VCE = 10 V)
(IC = 50 mA, VCE = 10 V)
(IC = 100 mA, VCE = 10 V)
Collector - Emitter Saturation Voltage
(IC = 50 mA, IB = 6.0 mA)
Base - Emitter Saturation Voltage
(IC = 50 mA, IB = 5.0 mA)
Current - Gain - Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 100 MHz)
Output Capacitance
(VCB = 20 V, f = 1.0 MHz)
Switching Characteristics
(IC = 50 mA, VCC = 100 V)
(IB1 = 5.0 mA, IB2 = 10 mA)
NPN Epitaxial Planar Transistor
Mechanical Dimensions
.110
.060
3
2
.016
.037
.115
.037
3
1
1
.043
.016
.004
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Value
400
400
5.0
225
500
-55 to 150
Min
400
400
5.0
---
---
100
100
15
---
---
50
---
Units
V
V
V
mA
mW
oC
Max
Unit
---
V
---
V
---
V
0.1
µA
0.1
µA
300
0.5
V
0.9
V
---
MHz
5.0
pF
Ton
35 (TYP)
ns
Toff
2260 (TYP)
ns
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