FMM23P20 Datasheet, PDF (1/4 Pages) First Components International – 2.3A 20V P-Channel Enhancement-Mode MOSFET

FMM23P20 2.3A 20V P-Channel Enhancement-Mode MOSFET
20V P-Channel Enhancement-Mode MOSFET
V_DS= -20V
R_DS(ON), Vgs@-4.5V, Ids@-2.8A = 100mΩ
R_DS(ON), Vgs@-2.5V, Ids@-2.0A = 150mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
TO-236
(SOT-23)
Internal Schematic Diagram
Drain
Gate
Source
Top View
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
TA = 25^oC
TA = 75^oC
I_D
-2.3
I_DM
-10
P_D
0.9
0.57
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=50A, VDD=25V, L=0.5mH
T_J, T_stg
EAS
-55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
R_θJC
R_θJA
145
Note: 1. Maximum DC current limited by the package
2. 1-in² 2oz Cu PCB board
Feb '06 Rev 2
Unit
V
A
W
o_C
mJ
o_C/W
1