FMF7N60 Datasheet, PDF (1/7 Pages) First Components International – 7A 600V N CHANNEL ISOLATED POWER MOSFET

FMF7N60 7A 600V N CHANNEL ISOLATED POWER MOSFET
N-Channel MOSFET
Features
■ R_DS(on) (Max 1.2 Ω )@V_GS=10V
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using DMOS technology.
This latest technology has been especially designed to minimize
on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power
supplies, active power factor correction, electronic lamp ballasts based
on half bridge topology.
Symbol
1. Gate_{
{ _{2. Drain}
●
◀▲
●
●
{ ^{3. Source}
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
7.0*
4.4*
28*
±30
420
14.7
4.5
48
0.38
- 55 ~ 150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W